IndiumV2, Main, Exploration, bibRecord, 000630

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Identifieur interne : 000630 ( Main/Exploration ); précédent : 000629; suivant : 000631

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Auteurs : RBID : pubmed:23482028

English descriptors

KwdEn :
- Electric Conductivity, Equipment Design, Equipment Failure Analysis, Gallium (chemistry), Indium (chemistry), Lighting (instrumentation), Semiconductors.
MESH :
- chemical , chemistry : Gallium, Indium.
- instrumentation : Lighting.
- Electric Conductivity, Equipment Design, Equipment Failure Analysis, Semiconductors.

Abstract

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

PubMed: 23482028

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Le document en format XML

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<author><name sortKey="Zhang, Zi Hui" uniqKey="Zhang Z">Zi-Hui Zhang</name>
<affiliation wicri:level="1"><nlm:affiliation>LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.</nlm:affiliation>
<country xml:lang="fr">Singapour</country>
<wicri:regionArea>LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798</wicri:regionArea>
</affiliation>
</author>
<author><name sortKey="Tan, Swee Tiam" uniqKey="Tan S">Swee Tiam Tan</name>
</author>
<author><name sortKey="Liu, Wei" uniqKey="Liu W">Wei Liu</name>
</author>
<author><name sortKey="Ju, Zhengang" uniqKey="Ju Z">Zhengang Ju</name>
</author>
<author><name sortKey="Zheng, Ke" uniqKey="Zheng K">Ke Zheng</name>
</author>
<author><name sortKey="Kyaw, Zabu" uniqKey="Kyaw Z">Zabu Kyaw</name>
</author>
<author><name sortKey="Ji, Yun" uniqKey="Ji Y">Yun Ji</name>
</author>
<author><name sortKey="Hasanov, Namig" uniqKey="Hasanov N">Namig Hasanov</name>
</author>
<author><name sortKey="Sun, Xiao Wei" uniqKey="Sun X">Xiao Wei Sun</name>
</author>
<author><name sortKey="Demir, Hilmi Volkan" uniqKey="Demir H">Hilmi Volkan Demir</name>
</author>
</titleStmt>
<publicationStmt><date when="2013">2013</date>
<idno type="RBID">pubmed:23482028</idno>
<idno type="pmid">23482028</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electric Conductivity</term>
<term>Equipment Design</term>
<term>Equipment Failure Analysis</term>
<term>Gallium (chemistry)</term>
<term>Indium (chemistry)</term>
<term>Lighting (instrumentation)</term>
<term>Semiconductors</term>
</keywords>
<keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Gallium</term>
<term>Indium</term>
</keywords>
<keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Lighting</term>
</keywords>
<keywords scheme="MESH" xml:lang="en"><term>Electric Conductivity</term>
<term>Equipment Design</term>
<term>Equipment Failure Analysis</term>
<term>Semiconductors</term>
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<front><div type="abstract" xml:lang="en">This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.</div>
</front>
</TEI>
<pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23482028</PMID>
<DateCreated><Year>2013</Year>
<Month>03</Month>
<Day>13</Day>
</DateCreated>
<DateCompleted><Year>2013</Year>
<Month>09</Month>
<Day>03</Day>
</DateCompleted>
<DateRevised><Year>2013</Year>
<Month>11</Month>
<Day>21</Day>
</DateRevised>
<Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN>
<JournalIssue CitedMedium="Internet"><Volume>21</Volume>
<Issue>4</Issue>
<PubDate><Year>2013</Year>
<Month>Feb</Month>
<Day>25</Day>
</PubDate>
</JournalIssue>
<Title>Optics express</Title>
<ISOAbbreviation>Opt Express</ISOAbbreviation>
</Journal>
<ArticleTitle>Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.</ArticleTitle>
<Pagination><MedlinePgn>4958-69</MedlinePgn>
</Pagination>
<ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.21.004958</ELocationID>
<Abstract><AbstractText>This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.</AbstractText>
</Abstract>
<AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Zhang</LastName>
<ForeName>Zi-Hui</ForeName>
<Initials>ZH</Initials>
<Affiliation>LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.</Affiliation>
</Author>
<Author ValidYN="Y"><LastName>Tan</LastName>
<ForeName>Swee Tiam</ForeName>
<Initials>ST</Initials>
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<Author ValidYN="Y"><LastName>Liu</LastName>
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<Author ValidYN="Y"><LastName>Ju</LastName>
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<Author ValidYN="Y"><LastName>Zheng</LastName>
<ForeName>Ke</ForeName>
<Initials>K</Initials>
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<Author ValidYN="Y"><LastName>Kyaw</LastName>
<ForeName>Zabu</ForeName>
<Initials>Z</Initials>
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<Author ValidYN="Y"><LastName>Ji</LastName>
<ForeName>Yun</ForeName>
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<Author ValidYN="Y"><LastName>Hasanov</LastName>
<ForeName>Namig</ForeName>
<Initials>N</Initials>
</Author>
<Author ValidYN="Y"><LastName>Sun</LastName>
<ForeName>Xiao Wei</ForeName>
<Initials>XW</Initials>
</Author>
<Author ValidYN="Y"><LastName>Demir</LastName>
<ForeName>Hilmi Volkan</ForeName>
<Initials>HV</Initials>
</Author>
</AuthorList>
<Language>eng</Language>
<PublicationTypeList><PublicationType>Journal Article</PublicationType>
<PublicationType>Research Support, Non-U.S. Gov't</PublicationType>
</PublicationTypeList>
</Article>
<MedlineJournalInfo><Country>United States</Country>
<MedlineTA>Opt Express</MedlineTA>
<NlmUniqueID>101137103</NlmUniqueID>
<ISSNLinking>1094-4087</ISSNLinking>
</MedlineJournalInfo>
<ChemicalList><Chemical><RegistryNumber>0</RegistryNumber>
<NameOfSubstance>gallium nitride</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>0</RegistryNumber>
<NameOfSubstance>indium nitride</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>045A6V3VFX</RegistryNumber>
<NameOfSubstance>Indium</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber>
<NameOfSubstance>Gallium</NameOfSubstance>
</Chemical>
</ChemicalList>
<CitationSubset>IM</CitationSubset>
<CommentsCorrectionsList><CommentsCorrections RefType="ErratumIn"><RefSource>Opt Express. 2013 Jul 29;21(15):17670</RefSource>
</CommentsCorrections>
</CommentsCorrectionsList>
<MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Electric Conductivity</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName>
<QualifierName MajorTopicYN="Y">chemistry</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName>
<QualifierName MajorTopicYN="Y">chemistry</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Lighting</DescriptorName>
<QualifierName MajorTopicYN="Y">instrumentation</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName>
</MeshHeading>
</MeshHeadingList>
</MedlineCitation>
<PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year>
<Month>3</Month>
<Day>14</Day>
<Hour>6</Hour>
<Minute>0</Minute>
</PubMedPubDate>
<PubMedPubDate PubStatus="pubmed"><Year>2013</Year>
<Month>3</Month>
<Day>14</Day>
<Hour>6</Hour>
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<PubMedPubDate PubStatus="medline"><Year>2013</Year>
<Month>9</Month>
<Day>4</Day>
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<Minute>0</Minute>
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<PublicationStatus>ppublish</PublicationStatus>
<ArticleIdList><ArticleId IdType="pii">249429</ArticleId>
<ArticleId IdType="pubmed">23482028</ArticleId>
</ArticleIdList>
</PubmedData>
</pubmed>
</record>

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Serveur d'exploration sur l'Indium

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.

English descriptors

Abstract

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